Publication:
Threshold Switching Characteristics of Nb/NbO2/TiN Vertical Devices

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dc.contributor.authorWang, Yuhan
dc.date.accessioned2026-01-22T19:32:36Z
dc.date.issued2015-11-15
dc.descriptionOriginal submission date: 2017-07-12T02:07:00Z
dc.description.abstractWe have observed threshold switching (TS) with minimal hysteresis and a small threshold electric field (60–90 kV/cm) in Nb/NbO2/TiN structures. The TS was unipolar with certain repeatability. A less sharp but still sizable change in the device resistance can be observed up to 150 ◦C. The TS without Nb capping layer exhibited hysteretic characteristics. It was proposed that the surface Nb2O5 layer on NbO2 could significantly modify the TS in this vertical device. This understanding of the surface effect will allow further control of the non-linear IV characteristics for NbO2-based switches or selector devices.
dc.description.sponsorshipIEEE Electron Devices Society
dc.identifiern296wz13w
dc.identifier.citation10.1109/JEDS.2015.2503922
dc.identifier.doi10.18130/V3Q453
dc.identifier.urihttps://doi.org/10.18130/V3Q453
dc.identifier.urihttps://libraopen.library.virginia.edu/handle/item/8704
dc.languageEnglish
dc.language.isoen
dc.publisherIEEE
dc.rightsAttribution 4.0 International (CC BY)
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subjectNiobium Dioxide
dc.subjectThreshold Switching
dc.subjectMetal-Insulator Transition
dc.titleThreshold Switching Characteristics of Nb/NbO2/TiN Vertical Devices
dc.typeArticle
dspace.entity.typePublication
relation.isAuthorOfPublication6cf187d4-699f-424c-b57e-e809bd3dddfb
relation.isAuthorOfPublication.latestForDiscovery6cf187d4-699f-424c-b57e-e809bd3dddfb

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